| 摘要 |
PURPOSE:To enable to execute etching of the recessed structure of a Schottky barrier type FET monitoring any time by a method wherein a pair of electrodes is arranged over a semiconductor substrate, selective etching is performed to the neighborhood of the surface, and a current between the electrodes is monitored to be controlled. CONSTITUTION:The substrate holder of an ion beam milling device can be inclined as to enable to set at a selected angle the incident angle of an ion beam to the surface of a substrate 45 to be processed, and a rotary base plate 42, a substrate to be processed equipping mechanism 44a, a probe supporting mechanism 47 and metal rails 48, etc. can be rotated making a rotary shaft 43 penetrating a water cooling part 41 as an axis. Probes 46 of two pieces are connected to the outside of the rotary system through the metal rails 48 and roller electrodes 49. The accelerating voltage of the ion beam is made to the degree of 200V or less to make damage to be generated to the semiconductor substrate according to an etching process for formation of a recess to be insignificant, and made as to be recovered easily at the later manufacturing process. |
