| 摘要 |
PURPOSE:To simplify the manufacturing process of a complementary semiconductor device, and to enhance reproducibility thereof by a method wherein a selectively oxidized pattern is used for the mask alignment reference of a well pattern, and driving in of the well is performed in an ammonia atmosphere. CONSTITUTION:Formation of the resist pattern 31 of a well is performed using a selectively oxidized pattern 27 formed on a silicon substrate 1 for formation of field oxide films as the alignment reference. Ion implantation is performed using the resist pattern 31 as a mask to form an ion implanted region 3A. Heat treatment is performed in an ammonia gas atmosphere to form a well 3. An oxidation resistant nitride film 28 for selective oxidation is formed at the same time, and when field oxidation is performed using the nitride film as a mask, insulating isolation between elements according to selective oxide films 50 can be attained. Well forming driving in and formation of the nitride film for selective oxidation can be processed and formed at the same time, and the manufacturing process can be shortened and simplified. |
