发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To shorten the polling time of a word line and to improve an operation speed by connecting a discharging transistor (TR) and making high discharging current to flow only for the switching transient time of selecting state of word lines. CONSTITUTION:For the transient time turning word driving inputs I1, I2 to low and high levels respectively and turning the word lines WT311, WT312 to non- selected and selected state respectively, the line WT311 is gradually discharged as compared to the polling of the input I1. The potential waveforms of nodes B1, A1 which are obtained by level-shifting the potential of the word line WT311, the input I1 respond also to the discharge and the TRQ341 is turned off. Consequently, the discharging TRQ321 is turned on by the rise of the node C1 to the high level and the word line WT311 is rapidly discharged by discharge current ID and the potential is rapidly dropped. Thus, the polling time of the word line at the non-selection is shortened and the speed of the switching operation from selection to non-selection is improved.
申请公布号 JPS6066390(A) 申请公布日期 1985.04.16
申请号 JP19830174601 申请日期 1983.09.21
申请人 NIPPON DENKI KK 发明人 IRIKITA SHIGEYOSHI
分类号 G11C11/414;G11C11/34;(IPC1-7):G11C11/34 主分类号 G11C11/414
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