| 摘要 |
PURPOSE:To remove a photo-resist without using mechanical operation, to reduce the possibility of the damage of a substrate and to improve yield by providing a process, etc. using a non-proton solvent having high dipole moment on the removal of the photo-resist after selective ion implantation. CONSTITUTION:A positive type photo-resist is applied on the surface of a substrate 1, patterned according to a required shape and used as a mask to implanted ions 3. Silicon ions are implanted selectively as implanted ions 3 to form a semiconductor substrate active section 4 to the semiconductor substrate 1. Most of the positive type photo-resist 21 are eluted by dipping the semiconductor substrate 1, on which the positive type photo-resist 21 is applied, in dimethylformamide(DMF) as a non-proton solution having high dipole moment. Photo-resist residue 21a is removed simply by further dipping the substrate in a photo- resist removing agent as a conventional photo-resist removing method. |
