发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing generation of by-products without using a complicated device.SOLUTION: In a reaction chamber 4 of a semiconductor manufacturing device, a semiconductor substrate 7 is placed. Reaction gas is supplied into the reaction chamber 4 to process a surface of the substrate, and simultaneously, other gas is mixed and reacted with unreacted gas that passed through the reaction chamber 4, at a downstream side of the reaction chamber 4. By the mixed gas, by-products that are likely to be sublimated even at a low temperature are produced, and then, removed by a normal air exhaustion step.SELECTED DRAWING: Figure 1
申请公布号 JP2016178169(A) 申请公布日期 2016.10.06
申请号 JP20150056087 申请日期 2015.03.19
申请人 NEW JAPAN RADIO CO LTD 发明人 ARAKI SHINICHI
分类号 H01L21/31;C23C16/44;H01L21/3065 主分类号 H01L21/31
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