| 发明名称 |
Method for manufacturing an electrical interconnection by selective tungsten deposition |
| 摘要 |
A structure for an electrical interconnection suitable for a semiconductor integrated circuit is made by a process utilizing selective tungsten deposition at low pressure to form an intermediate conductive layer without significantly ablating nearby insulating material.
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| 申请公布号 |
US4517225(A) |
申请公布日期 |
1985.05.14 |
| 申请号 |
US19830490381 |
申请日期 |
1983.05.02 |
| 申请人 |
SIGNETICS CORPORATION |
发明人 |
BROADBENT, ELIOT K. |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/302;H01L21/3065;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/285;H01L21/88 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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