| 摘要 |
<p>1. A device for the electrolytic deposition of a conductive material on integrated circuit wafers of substantially circular form and having a front face bearing an electrically conductive layer on which the material is to be deposited at least locally and a back, said device being designed to be put into an electrolytic vat fed by a source of d.c. voltage located outside this vat, said device comprising a framework (20) for receiving at least a first pair of integrated circuit wafers (P2 , P'2 ) and an electrical system (58, 59, 60, 60'; 58, 59, 64, 65) fixed to the framework to enable coupling said electrically conductive layer of each wafer to said voltage source, said device further comprising a mechanical system (28, 29, 54) likewise fixed to the framework for positioning said wafers and holding them in place, said device being characterized by the fact that the wafers are arranged back-to-back and in contact against one another on the framework ; that the framework includes, essentially in a same plane, two riser members (21, 22) and at least a first (24) and a second (25) runner members essentially parallel to one another and fastened at their ends to said riser members so as to be separated by a distance greater than the diameter of said wafers, said riser and runner members defining a space (E1 ) intended to receive said wafers (P2 , P'2 ) in the plane of the framework ; and that said mechanical system includes a longitudinal groove (28) formed in the second runner member for receiving a first portion (a) of the periphery of the wafers and a mechanism (29) positioned in said space, on the side of the first runner member, and likewise including a groove substantially facing the groove of the second runner member, for receiving a second portion (b) of the periphery of the wafers diametrically opposed to the first one, said mechanism being designed to apply a force directed towards said second runner member to this second portion of the periphery.</p> |
