发明名称 |
Resist underlayer film forming composition that contains novolac resin having polynuclear phenol |
摘要 |
There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures:; |
申请公布号 |
US9469777(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201314415040 |
申请日期 |
2013.08.13 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
Endo Takafumi;Shinjo Tetsuya;Hashimoto Keisuke;Someya Yasunobu;Nishimaki Hirokazu;Karasawa Ryo;Sakamoto Rikimaru |
分类号 |
G03F7/004;C09D161/12;C07C39/15;G03F7/038;G03F7/11;H01L21/027;C08G8/02;C08G8/04;C09D161/04;H01L21/308;H01L21/311 |
主分类号 |
G03F7/004 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A resist underlayer film-forming composition comprising:
a solvent; and a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. |
地址 |
Tokyo JP |