Method of making a field effect transistor with modified Schottky barrier depletion region

摘要

A method of making a field effect transistor with a modified metal semiconductor Schottky barrier depletion region wherein a GaAs semiconductive active layer on a semiinsulating substrate is supplied with a pair of ohmic contacts and with a gate or barrier electrode between the ohmic contacts and spaced therefrom so that below the surface of the active layer upon which the barrier electrode and ohmic contacts are supplied, an electron-depletion region is formed between each ohmic contact and the gate or barrier electrode. According to the invention, this surface region is treated by bombardment with nitrogen or by the application of a layer thereto to modify the depth of the depletion region so that this depth beneath the treated surface region will differ from that beneath the gate or barrier electrode.