High-speed field-effect transistor.

摘要

Herein disclosed is a semiconductor device in which control means for carriers migrating in a first semiconductor (11) includes an interface state layer (12) lying on the first semiconductor (11) and a second conductor layer (13) lying on the interface state layer (12). The interface state layer (12) has its Fermi level pinned to that of the second semiconductor layer (13). By thus constructing an FET or the semiconductor device, an inversion or storage layer can be easily formed in the interface merely by applying a voltage to the control means.