发明名称 Process for selectively depositing a refractory metal layer on a graphite piece
摘要 A process for selectively depositing a tungsten or tantalum refractory metal on a graphite piece, particularly for X-ray tube anodes, wherein the graphite piece is masked on selected surfaces, an intermediate layer of a coating material is deposited on unmasked surfaces to promote adhesion of the refractory metal followed by removal of the masking and deposition of the refractory metal on all surfaces, and finally removing from the formerly masked surfaces refractory metal poorly adhered thereto.
申请公布号 US4571286(A) 申请公布日期 1986.02.18
申请号 US19830540557 申请日期 1983.10.11
申请人 THOMSON-CSF 发明人 PENATO, JEAN-MARIE
分类号 C04B41/51;C04B41/52;C04B41/88;C04B41/89;C23C14/04;C25D5/54;H01J35/10;(IPC1-7):C25D5/02;C25D5/10;B05D1/32;B05D5/12 主分类号 C04B41/51
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