发明名称 |
Hybrid epitaxial growth process |
摘要 |
A method of making infrared detectors on a substrate of mercury cadmium telluride (HgCdTe) or mercury zinc telluride (HgZnTe). The steps include those of preparing the substrate, etching and passivating it, and placing it in the ultra-high vaccuum environment of a molecular beam epitaxy apparatus. While in the apparatus, one or more layers of zinc cadmium telluride (ZnCdTe) are deposited. When the ZnCdTe deposition is finished, the substrate is removed from the apparatus and the detectors are delineated lithographically.
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申请公布号 |
US4589192(A) |
申请公布日期 |
1986.05.20 |
申请号 |
US19840667699 |
申请日期 |
1984.11.02 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
DINAN, JOHN H.;GUTIERREZ, WILLIAM A. |
分类号 |
H01L21/363;H01L31/0296;H01L31/18;(IPC1-7):H01L21/363 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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