| 摘要 |
Highly heat-resistant polyimidazole and polyimidazopyrrolone relief structures can be manufactured in a very pure form and with short exposure times by applying radiation-sensitive soluble polymer precursors in the form of a layer or a foil to a substrate, irradiating the layer or foil through negative patterns with actinic light, or electrons, or by guiding a light, electron, ion, or laser beam, removing the non-irradiated layer or foil parts, and optionally subsequently annealing. Thereby reaction products, which are prepared in the presence of carbodiimides, of aromatic and/or heterocyclic tetraamino compounds and either: (a) olefinically unsaturated monocarboxylic acids and dicarboxylic acids, or (b) olefinically unsaturated monocarboxylic acids and aromatic and/or heterocyclic tetracarboxylic acid dianhydrides, or (c) olefinically unsaturated tetracarboxylic acid diesters in the form of addition products of the tetracarboxylic acid dianhydrides and olefinically unsaturated alcohols are used as polymer precursors. The relief structures prepared according to the invention are particularly well suited for use as a resist, surface protection, and because of their high purity, as a durable protective and insulating material in the semiconductor area.
|
