Raised gate efet.

摘要

Lateral FET structure is disclosed for bidirectional power switching. A raised gate structure enables distal gate electrode portions (174, 176) to be in close proximity to FET channels (140, 142) and the remainder (172) of the gate to be separated from the drift or drain region (150) by a substantially greater distance so as to prevent undesired inducement of potential conduction channels through the drift region in the OFF state. This enables the gate to be referenced to the same potential level as one of the main terminals in the OFF state while still affording high voltage blocking capability. A multicell matrix array is also disclosed.