INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICE,申请号JP19850192395-传众专利搜索

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发明名称	INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICE
摘要
申请公布号	JPS6252969(A)	申请公布日期	1987.03.07
申请号	JP19850192395	申请日期	1985.08.30
申请人	NIPPON TEXAS INSTR KK	发明人	HASHIMOTO SEIJI
分类号	H01L27/10;H01L21/265;H01L21/8242;H01L27/108;H01L29/10;H01L29/78	主分类号	H01L27/10
代理机构		代理人
主权项
地址

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