发明名称 Automated plasma reactor
摘要 A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched. The cassette loadlock system is able to evacuate a whole cassette of semiconductor wafers for processing which lowers the particulate environment for the slices and, provides a more stable environment for the slices by removal of moisture and preventing static discharges and additionally provides a safety feature that protects the operators from harsh or toxic gases that are traditionally used in semiconductor type plasma reactor.
申请公布号 US4654106(A) 申请公布日期 1987.03.31
申请号 US19840663901 申请日期 1984.10.22
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 DAVIS, CECIL J.;JOHNSON, RANDALL E.;SPENCER, JOHN E.
分类号 H01J37/32;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 主分类号 H01J37/32
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