发明名称 Lithographic Apparatus and Method
摘要 A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.
申请公布号 NL2016903(A) 申请公布日期 2016.12.29
申请号 NL20162016903 申请日期 2016.06.07
申请人 ASML NETHERLANDS B.V. 发明人 CEDRIC MARC AFFENTAUSCHEGG;MILENKO JOVANOVIC;RICHARD JOHANNES FRANCISCUS VAN HAREN;REINER MARIA JUNGBLUT;ROBERTUS WILHELMUS VAN DER HEIJDEN
分类号 G03F7/20 主分类号 G03F7/20
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