发明名称 |
Method for the manufacture of semiconductor devices with planar junctions having a variable charge concentration and a very high breakdown voltage |
摘要 |
The invention relates to a method for the manufacture of high voltage semiconductor devices with at least one planar junction with a variable charge concentration. The method consists in doping with impurities of a same type, in a region of monocrystalline semiconductor material, a first zone, and then a second zone which comprises the first, and so on, and in carrying out a subsequent heat treatment so as to provide a planar junction with a stepped profile and a concentration of impurities which decreases from the center to the periphery in a predetemined range. In this way the intensity of the surface electric field, when the junction is reverse biased, is reduced as a result of which it is possible to provide planar junctions having very high breakdown voltages of some thousands of volts.
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申请公布号 |
US4667393(A) |
申请公布日期 |
1987.05.26 |
申请号 |
US19850768028 |
申请日期 |
1985.08.21 |
申请人 |
SGS MICROELETTRONICA S.P.A. |
发明人 |
FERLA, GIUSEPPE;MUSUMECI, SALVATORE |
分类号 |
H01L21/265;H01L21/331;H01L29/06;H01L29/10;H01L29/36;H01L29/73;H01L29/732;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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