发明名称 SEMICONDUCTOR DEVICE WITH PHS STRUCTURE
摘要 PURPOSE:To reduce the number of steps of forming a plurality of PHS structure semiconductor chips, checking characteristics, sorting and assembling the chips by including a pellet having a pair of chips. CONSTITUTION:After a photoresist pattern is formed by a viahole PR mask, a substrate 2 is etched to form viaholes 1, a photoresist pattern is then formed by Au plating PR mask, and Au plating 4 is formed as a thick metal layer. Since the substrate 2 is very thin, it is bonded to a quartz plate. Approaching pair chips are merely coupled by an extremely thin metal of several 1,000Angstrom . Then, the pellet and the plate are separated through etching and pellet separating steps to separate the pellets at random, and the separated pellets form chip pairs of 6 cells. When the pellets are assembled, an insulated gate field effect semiconductor device having a PHS structure is obtained.
申请公布号 JPS62145845(A) 申请公布日期 1987.06.29
申请号 JP19850288702 申请日期 1985.12.20
申请人 NEC CORP 发明人 URABE JUNICHI
分类号 H01L23/34;H01L21/68 主分类号 H01L23/34
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