| 摘要 |
In memory cells with capacitors which are provided with a back-gate electrode by means of field-effect transistors, the channel region of the FET must be doped more than usual in order for the FET to block reliably. This results in increased costs. An integrated circuit device is provided with a capacitor (1), a plurality of FETs, of which one (5) has a back-gate electrode (9) and together with the capacitor represents a memory cell, and with a voltage supply circuit (100), which supplies the back-gate electrode (9) with a specified voltage, as a result of which the absolute value of the threshold voltage of the FET (5) in the memory cell is made lower than that of the remaining FETs. Such devices in which the threshold voltage is controlled by means of the back-gate electrode can be suitably used in the case of dynamic memory cells. <IMAGE>
|
