| 摘要 |
A planar type thyristor has a semiconductor substrate of one conductivity type, a first and second regions of other conductivity type formed in the substrate and a third region of the one conductivity type formed in one of the first and second regions. An electrically floating electrode is formed on the substrate between the first and second region via an insulator film and a control electrode is formed on the floating electrode via another insulator film. A gate trigger current is controlled by a voltage applied to the control electrode.
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