发明名称 |
GAAS SINGLE CRYSTAL AND PREPARATION THEREOF |
摘要 |
A GaAs single crystal is disclosed containing at least one impurity selected from the group consisting of In, Al, C and S, in which fluctuation of the concentration of the impurity is less that 20% throughout the crystal from which wafers having uniform characteristics can be produced, and which may be prepared by a process comprising, at a high temperature and under high pressure, pulling up the single crystal from a raw material melt containing simple substances Ga and As or GaAs compound as well as at least one impurity while controlling the concentration of As so as to keep a distribution coefficient of the impurity in GaAs within 1+/-0.1. |
申请公布号 |
EP0149082(B1) |
申请公布日期 |
1988.02.24 |
申请号 |
EP19840114530 |
申请日期 |
1984.11.30 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES LIMITED |
发明人 |
SHIMODA, TAKASHI C/O ITAMI WORKS OF SUMITOMO;SASAKI, MASAMI C/O ITAMI WORKS OF SUMITOMO |
分类号 |
C30B15/04;C30B15/00;C30B27/02;C30B29/42 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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