Method of detecting the conductance state of a non-volatile memory device

摘要

PCT No. PCT/GB84/00420 Sec. 371 Date Jul. 22, 1985 Sec. 102(e) Date Jul. 22, 1985 PCT Filed Dec. 6, 1984 PCT Pub. No. WO85/02709 PCT Pub. Date Jun. 20, 1985.Method of determining the conductance state of a non-volatile memory device switchable between high and low conductance states. The device comprises at least one p-type amorphous or microcrystalline semiconductor and an n or i-type layer. The device is irradiated with light to produce a photovoltaic response which is used to determine the conductance state.