发明名称 |
Method of making light-emitting diodes |
摘要 |
A structure and method for use in optical communication systems is provided in which a metal is diffused in a heterojunction region beneath a metal contact of a AlGaAs light emitting diode. This structure and method significantly reduces the contacting shadowing problem due to current crowding beneath the contact thus increasing the light output from the device.
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申请公布号 |
US4755485(A) |
申请公布日期 |
1988.07.05 |
申请号 |
US19870098258 |
申请日期 |
1987.09.18 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
TSAI, MINQ-JONQ |
分类号 |
H01L33/00;H01L33/30;H01L33/38;H01L33/40;H01S5/20;H01S5/323;(IPC1-7):H01L21/383 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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