发明名称 Method of making light-emitting diodes
摘要 A structure and method for use in optical communication systems is provided in which a metal is diffused in a heterojunction region beneath a metal contact of a AlGaAs light emitting diode. This structure and method significantly reduces the contacting shadowing problem due to current crowding beneath the contact thus increasing the light output from the device.
申请公布号 US4755485(A) 申请公布日期 1988.07.05
申请号 US19870098258 申请日期 1987.09.18
申请人 HEWLETT-PACKARD COMPANY 发明人 TSAI, MINQ-JONQ
分类号 H01L33/00;H01L33/30;H01L33/38;H01L33/40;H01S5/20;H01S5/323;(IPC1-7):H01L21/383 主分类号 H01L33/00
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