Writing speed in multi-port static rams

摘要

A write-bias gate in the form of an FET is provided for each of the bit-lines. Each FET has its drain electrode connected to logic 1 and its source electrode connected to the bit-line. When one port is writing, the write-bias gates on the other port(s) are driven by a signal which causes them to enter a pass condition, supplying extra current to pull up the bit lines of the non-writing port(s).