| 摘要 |
PURPOSE:To improve the manufacturing efficiency by integrating a differential amplifier having a MESFET at least to the gate of which a resistor is connected in series into a single chip thereby eliminating the need for the impurity injection process. CONSTITUTION:Drains of Schottky FETs (MESFETs) 1, 2 for hole voltage amplifier are connected to a VDD power supply via load resistors 4, 5, sources are connected in common to a drain of a MESFET3 for a constant current source, the gate and source of the MESFET 3 are connected in common and the common connecting point is connected to the VSS power supply via a resistor 10 for surge protection. That is, since the resistors 4, 5 are connected in series with the gate, the resistors 4, 5 act like a cushion against a surge. Thus, the surge durability of the constant current source use MESFET 3 is improved and the surge capability of the entire differential amplifier is improved. Thus, the semiconductor integrated circuit incorporating the differential amplifier devising the surge destruction countermeasures without any surge protection diode is obtained.
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