| 摘要 |
PURPOSE:To obtain an ultra-high speed semiconductor device having high sensibility and operating at low operating voltage by using an oxide superconductive material as electrode and wiring layer materials in the semiconductor device and employing a photo-detector utilizing the grain-boundary Josephson junction of an oxide superconductor material. CONSTITUTION:A transistor 3, a photo-detector 4 and a passive device 5 consisting of a resistor, a capacitor, etc., are formed respectively into the predetermined regions of an epitaxial growth layer 2 on a semiconductor substrate 1. Electrode-wiring layers 7 mutually connecting the photo-detector 4 and the transistor 3 and electrode wiring layers 8 connecting the transistor 3 and the passive device 5 and being connected to external terminals 11 are shaped, and an oxide superconductor material consisting of the ceramics of substances such as La-Sr-Cu-OK is used as the electrode-wiring layers 7 and 8. The photo-detector 4 employs the grain boundary Josephson junction of an oxide superconductor such as BaPb1-xBixO3. Accordingly, the delay time (time constants) in electrodes and wiring layers is brought to zero, the speed of response and working speed are increased, and the photo-detector is operated at low voltage, thus improving quantum efficiency.
|
