| 摘要 |
PURPOSE:To enable an operational speed to be high by a method wherein a first and second semiconductor are smaller in thickness than the mean free path of an electron and laminated alternately by one period or more, where the relation between the energy values of a hole and an electron base states are adjusted. CONSTITUTION:A first and a second semiconductors 103 and 104 with thickness smaller than the mean free path of an electron are laminated alternately by one period or more. And, the energy value at the upper end of a valence electron band of the first semiconductor 103 is rendered larger than the energy value at the lower end of a conductive band of the second semiconductor 104, the value of a hole base state 109 in the first semiconductor 103 is made larger than that of an electron base state 108 in the second semiconductor 104 when the electronic field is not applied in the laminated direction. And, the energy value of a hole base state 109 is rendered smaller than the that of an electron base state 108 in the second semiconductor 104 when the electric field is applied which is not large enough to induce the avalanche effect. By these processes, a high speed operation can be attained.
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