| 摘要 |
PURPOSE:To improve the reliability by burying a metal layer into the connecting window of the lower-layer wiring, and depositing a metal layer on the inter-layer insulating layer including the above-mentioned metal layer to form an upper- layer wiring, thereby uniformizing the covering of the upper-layer wiring. CONSTITUTION:On a semiconductor substrate 1, an insulating film 2, a lower- layer wiring 3 and an inter-layer insulating film 4 such as silicon nitride are stacked, and a window 6 is formed in the film 4 by an etching using a photoresist film 5 as a mask. Then, when a metal layer 7 is deposited on the whole surface including the window 6 and a lift-off treatment is applied, the metal layer 7 remains only in the window 6, and when a metal layer is deposited on the whole surface including this layer 7 and is selectively etched, an upper- layer wiring 8 connecting to the wiring 3 is formed. With this construction, the wiring 3 does not encroach into the window 6 so that the covering of the wiring 3 becomes uniform, whereby the increase of wire breaking and resistance is prevented to improve the reliability.
|
