发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To attain the on-off control even when a potential of a main drive section is in the floating state by connecting an FF control circuit comprising of plural MOSFETs to a P and N-channel MOSFET connected in parallel to drive a switching three terminal semiconductor element. CONSTITUTION:When potentials of gates G2, G3 of MOSFETs 2, 8 are lower than potentials of terminals A, B, the source-drain potential of the FETs 2, 8 is higher than the gate potential. Thus, the FET 2 remains turned off and the FET 8 is turned on. As a result, the source-drain current of the FET 8 flows to the base of a TR 1, which is turned on. On the other hand, when the potential at terminal gates G2, G3 is higher than the potential at the terminals A, B, the source-drain potential of the FETs 2, 8 is lower than the gate potential and the FET 2 is turned on and the TR 1 is turned on. Thus, even when the potential at the main terminals A, B is in the floating state, the TR 1 of the main drive section is subject to sure on/off control.
申请公布号 JPS63276322(A) 申请公布日期 1988.11.14
申请号 JP19870110540 申请日期 1987.05.08
申请人 HITACHI LTD;HITACHI HARAMACHI SEMICONDUCTOR LTD 发明人 OWADA HIROSHI;SUGAWARA YOSHITAKA
分类号 H03K17/56;H03K17/687 主分类号 H03K17/56
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