发明名称 SECURING METHOD FOR SEMICONDUCTOR VAPOR GROWTH SYSTEM
摘要 PURPOSE:To prevent explosion from occurring even if dangerous gas is leaked in a reactor by inert gas is fed to the periphery of the reactor in a body cabinet during a normal work to cover the periphery of the reactor with an inert gas atmosphere. CONSTITUTION:Inert gas, such as N2 gas is fed to a lower section in a body cabinet 7 through an inert gas supply tube 18 for a normal time, the gas is fed substantially as a laminar flow to the periphery of a reactor 8 through a straightening hole 22, and the periphery of the reactor 8 is with the inert gas atmosphere to reduce oxygen content. Dangerous gas flow is detected by an H2 sensor 23 and an AsH3 sensor 24 and when at least one of the sensors 23, 24 detects the dangerous gas, a valve 26 is closed to stop supplying the gas to the reactor 8 by a command from a controller 25, an emergency valve 21 is opened by a command from the controller 25 to feed more amount of inert gas than that at a normal time into the cabinet 7 to reduce the concentration of the gas. A ventilation fan is rotated in emergency by a command from the controller 25 to discharge more amount than that at the normal time to feed it to an exhaust gas processor.
申请公布号 JPS63280414(A) 申请公布日期 1988.11.17
申请号 JP19870114486 申请日期 1987.05.13
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 KOMURA YUKIO;KOAIZAWA HISASHI;IKEDA MASAKIYO
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
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