| 摘要 |
PURPOSE:To obtain a good-quality single crystal by rotating an inner crucible contg. a melt to collect the bubbles and suspended matter on the melt surface at the center, lowering an inner crucible having a communicating hole at the position shifted from the center of the bottom into the melt, and growing a single crystal from the melt in the inner crucible. CONSTITUTION:The outer crucible 4 having a mechanism to rotate itself around the axis of symmertry is arranged in a chamber 9. The melt 1 and a liq. sealant 2, if necessary, are charged in the outer crucible 4, and the bubbles and suspended matter on the surface of the melt 1 or at the interface between the melt 1 and the sealant 2 are collected at the center by rotating the outer crucible 4. The inner crucible 5 capable of moving up and down in the outer crucible 4, capable of rotating with the vertical axis passing through the bottom center as the center, and having the communicating hole 6 at the position shifted from the bottom center is then lowered into the melt 1. A single crystal is then grown from the melt in the inner crucible 5 by the CZ method or the LEC method.
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