发明名称 ION BEAM SPUTTERING DEVICE
摘要 PURPOSE:To efficiently obtain a thin sputtered film having an excellent characteristic with the extremely simple structure of the title device by using a target having micropores capable of injecting an ion beam and having an irradiation surface at larger than a specified angle to the ion beam. CONSTITUTION:The ion beam 26 emitted from an ion source 13 is provided with kinetic energy in the electric field of an accelerator 15, and allowed to collide with the microporous target 16. Consequently, the target 16 is sputtered, and the particles on the target surface are sputtered into a vacuum as sputtered particles 5. The particle 5 is further allowed to collide with the charged particle as the incident beam, and provided with the kinetic energy toward a substrate 17. The target 16 has micropores, and the angle theta of the irradiation surface to the beam 26 is adjusted to >=30 deg.. As a result, the ion beam 27 passing through the micropore is mixed as a film forming control beam, and a thin film having excellent characteristic is formed on the substrate 17.
申请公布号 JPS63282265(A) 申请公布日期 1988.11.18
申请号 JP19870117676 申请日期 1987.05.14
申请人 TOPPAN PRINTING CO LTD;RES DEV CORP OF JAPAN 发明人 YASUJIMA HIROYUKI
分类号 C23C14/46 主分类号 C23C14/46
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