| 摘要 |
PURPOSE:To flatten upper and lower sides of a metallic silicide layer, by covering a high-melting-point metallic film with a cover film which is harder than the metallic film and has difficulty in its reaction to the metallic film during a solid-phase reaction of forming the metallic silicide layer. CONSTITUTION:A high-melting-point metallic film is covered with a cover film which is harder than the metallic film and has difficulty in its reaction to the metallic film, and a solid-phase reaction is performed. For example a surface of a substrate 1 is coated with titanium of about 600Angstrom in thickness by a sputtering method, and further titanium nitride is piled thereon in thickness of 500-1,000Angstrom by a reactive sputtering method or the like, so that a high- melting-point metallic film 7 of titanium and a cover film 9 of titanium nitride are formed. In succession, heat treatment for a solid-phase reaction is performed in an atmosphere of non-oxidative gas so as to form a metallic silicide layer 8 of titanium silicide, 1,000Angstrom or less in its mean thickness, on upper layer parts of a gate electrode 4 and source drain regions 6. Next the cover film 9 and the metallic 7 of no reaction are removed. The metallic silicide layer 8 formed in this way is sufficiently flat.
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