| 摘要 |
PURPOSE:To prevent projection of a metal (oxide) film from a glass substrate by providing grooves to the substrate and filling the metal (oxide) film in these grooves, thereby forming a photomask. CONSTITUTION:A photoresist film is formed on the glass substrate 1 and is then patterned to form the mask 2 having apertures 3. The substrate 1 is then etched by using the mask 2 to form the grooves 4 having a desired thickness. A metallic film 5 such as chromium film of a desired thickness is then formed over the entire surface by a vacuum deposition method, etc., and the mask 2 is removed by a solvent. Formation of the film 5 of the metal oxide film of chromium oxide, etc., is possible as well. Since the film 5 is embedded in the resulted photomask 10, the resist film of the semiconductor substrate is not cracked and the creeping round of photosensitive rays is obviated. Formation of fine patterns is thus enabled. |
