VERFAHREN ZUM ERZEUGEN VON MONOKRISTALLINEN QUECKSILBER-CADMIUM-TELLURID-SCHICHTEN.
摘要
Process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting weighted cadmium and tellurium quantities and a mercury bath to a specific thermal cycle.
申请公布号
DE295659(T1)
申请公布日期
1989.10.05
申请号
DE19880109560T
申请日期
1988.06.15
申请人
SELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.P.A., ROM/ROMA, IT