发明名称 VERFAHREN ZUM ERZEUGEN VON MONOKRISTALLINEN QUECKSILBER-CADMIUM-TELLURID-SCHICHTEN.
摘要 Process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting weighted cadmium and tellurium quantities and a mercury bath to a specific thermal cycle.
申请公布号 DE295659(T1) 申请公布日期 1989.10.05
申请号 DE19880109560T 申请日期 1988.06.15
申请人 SELENIA INDUSTRIE ELETTRONICHE ASSOCIATE S.P.A., ROM/ROMA, IT 发明人 BERNARDI, SERGIO, TORINO, IT
分类号 C30B19/04;H01L21/368 主分类号 C30B19/04
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