| 摘要 |
An inspection method of a photmask reticle for the fabrication of a semiconductor device having second pattern (21,22) with the same shape and size of first pattern (3). It is characterised by comparing the pattern information obtained from photomask reticle with the database data which have been used for the fabrication of photomask reticle, and comparing optically the pattern information of the imspected pattern with each of the other paterns of the same group, whereby all patterns of photomask reticle are checked. |
