发明名称 |
Amorphous photoelectric converting device |
摘要 |
An amorphous photoelectric converting device that remains efficient despite exposure to heat over long periods of time is formed by placing one on top of the other a plurality of photovoltaic elements each comprising a thin film of p-i-n structure. The p-type layer and the n-type layer of adjacent elements are made of microcrystalline silicon so that good ohmic contact is established, and the p-type layer of microcrystalline silicon contains boron in an amount sufficient to neutralize the donor atoms which diffuse from the adjacent n-type layer when the device is left to stand at high temperatures for a long period of time. The amount of boron, however, is limited to such an extent that the boron atoms do not adversely affect the initial desired characteristics of the device. A preferred range of boron levels is 3x1020 to 1x1021 atoms/cm3.
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申请公布号 |
US4875944(A) |
申请公布日期 |
1989.10.24 |
申请号 |
US19880242887 |
申请日期 |
1988.09.09 |
申请人 |
FUJI ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT, LTD. |
发明人 |
YOSHIDA, TAKASHI |
分类号 |
H01L31/04;H01L31/0288;H01L31/075 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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