ANALOG CMOS INTEGRATED CIRCUIT

摘要

The IC includes a NMOS formed on P-type wall region (11) in P-type base plate (10) and a PMOS formed on N-type base plate (10). Thin gate silicon dioxide layers (16,26) are grown on NMOS and PMOS regions. N-type buried layer (18) is formed by injecting ion in N- MOS layer and multi-crystal silicon layers (17,27) are grown by vaporising on gate silicon dioxides (16,26). Source region (13) and drain region (14) of NMOS and source and drain regions (24) of PMOS are formed by injecting N and P type impurities on NMOS and PMOS respectively.