| 摘要 |
<p>A semiconductor device wherein a stress relief film (12) of polyimide or like substance is formed on the complete surface of a semiconductor chip (10) in order to eliminate inconveniences arising from a difference between the thermal expansion rates of the insulating film and encapsulating plastic of the device. The stress relief film has apertures (13, 13a) formed therein for individually exposing the underlying bonding pads (11) on the chip. In order to avoid the concentration of stresses at the acute or right-angled corners, if any, of each aperture during the fabrication of the stress relief film by the photoetching process, and the consequent cracking of the film, each aperture (13, 13a) is made substantially circular in shape, for example, exactly circular, or rectangular with beveled corners.</p> |
