发明名称 Semiconductor integrated circuit
摘要 A semiconductor integrated circuit device includes a plurality of transistors each comprising a source region, a drain region, and a gate region, the source regions of the transistors are commonly connected to each other via via-holes produced through the semiconductor substrate at positions corresponding to the source regions, the gate regions of the transistors are commonly connected to each other on the semiconductor substrate, and the via-holes of the semiconductor substrate are arranged dispersively in two-dimensional direction in the surface of the semiconductor substrate.
申请公布号 US4908680(A) 申请公布日期 1990.03.13
申请号 US19880224294 申请日期 1988.07.26
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUOKA, HIROSHI
分类号 H01L21/822;H01L21/338;H01L21/82;H01L27/04;H01L27/06;H01L29/417;H01L29/812 主分类号 H01L21/822
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