| 摘要 |
To provide for improving the yield in the manufacture of wafer-scale integrated (WSI) or restructurable very-large-scale integrated (RVLSI) CMOS circuitry, a low power switch circuit, fabricated with standard CMOS process, provides both discretionary disconnect and connect capability, by a simple cut of one metal line to replace defective components with redundant good ones. The circuit uses either a reverse bias p-n junction or a transistor biased for sub-threshold conduction as a "pull-up" device, hence consuming very little power in either the original or the "cut" state. Large numbers of this switch can be incorporated into complex circuits without significantly loading the power supply.
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