发明名称 |
CONSERVATION CIRCUIT FOR HIGH POTENTIAL |
摘要 |
The high potential hold circuit comprises a high potential node and a high potential hold enhancement mode MOS transistor to hold a potential of the high potential node by setting the high potential hold transistor in an non-conducting state after the node is charged, having one end connected to a first input signal and the other end connected to the high potential node. A discharge enhancement mode MOS transistor discharges the potential of the high potential node, having one end connected to the other end of the ground potential connected to the high potential node and a gate connected to a second input signal.
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申请公布号 |
KR900002804(B1) |
申请公布日期 |
1990.04.30 |
申请号 |
KR19860008902 |
申请日期 |
1986.10.24 |
申请人 |
TOSHIBA CORP |
发明人 |
MAGOME KOICHI;KOINUMA HIROYUKI;TODA HARUKI |
分类号 |
H03K19/094;G11C5/14;H03K5/02;H03K17/06;H03K17/687;H03K19/003;H03K19/096;(IPC1-7):H03K19/096 |
主分类号 |
H03K19/094 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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