| 摘要 |
A method of manufacturing single-crystal film regions comprises the steps of: (a) forming on a single-crystal substrate (3) an insulating film (4) having a lower thermal conductivity than said substrate (3) and having openings at desired locations, (b) depositing a polycrystalline or amorphous semiconductor film (5) so as to continuously cover the exposed suface parts of said substrate (3) and insulating film (4), and (c) irradiating the whole surface of said polycrystalline or amorphous semiconductor film (5) with a laser or electron beam of an intensity which is lower than the critical value at which the parts of said polycrystalline or amorphous semiconductor film (5) in contact with said substrate (3) melt, whereby only those portions of said polycrystalline or amorphous semiconductor film (5) |
