| 摘要 |
A method of manufacturing semiconductor devices comprising at least a reactive ion etching step of a so-called substrate formed by semiconductor compounds having the general formulae Ga1-xAsxIn1-yPy, in which formulae x and y are the concentrations and lie between 0 and 1, this method comprising for carrying out this etching step a masking system of the said substrate cooperating with a flow of reacting gases, characterized in that the masking system is formed by a first metallic layer of titanium (Ti) of small thickness, on which a second metallic layer of nickel (Ni) is disposed having a thickness of about ten times larger, and in that the flow of reacting gases is formed by the mixture of the gases Cl2/CH4/H2/Ar, in which mixture Cl2 is present in a quantity of about a quarter of the quantities of CH4 and Ar, as far as the partial pressures in the etching chamber are concerned. Application: Manufacture of optoelectronic devices of III-V materials.
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