发明名称 Method of manufacturing liquid crystal display device
摘要 A liquid crystal display device comprises, a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display electrode and source electrode, a gate insulating film is formed on the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers. A channel is thus obtained between the ohmic layers with its length determined by the length of the gate electrode.
申请公布号 US4963503(A) 申请公布日期 1990.10.16
申请号 US19890330254 申请日期 1989.03.29
申请人 HOSIDEN ELECTRONICS CO., LTD. 发明人 AOKI, SHIGEO;UGAI, YASUHIRO;MIYAKE, KATSUMI;OKAMOTO, KOTARO
分类号 G02F1/1335;G02F1/1368 主分类号 G02F1/1335
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