发明名称 DIRECT BONDING PROCESS
摘要 The process is carried out between a first substrate (1) comprising a first layer of a first material and a second substrate (2) comprising a second layer (6) of a second material, the first material and the second material being of different natures and chosen from alloys of elements of columns III and V, the process comprising the steps of: a) providing the first substrate (1) and the second substrate (2); b) bringing the first substrate (1) and the second substrate (2) into contact so as to form a bonding interface (7) between the first layer and the second layer (6); c) carrying out a first heat treatment at a first predefined temperature; d) thinning one of the substrates (1,2); e) depositing, at a temperature lower than or equal to the first predefined temperature, a barrier layer (8) on the thinned substrate (1,2); and f) carrying out a second heat treatment at a second predefined temperature above the first predefined temperature.
申请公布号 WO2016180917(A1) 申请公布日期 2016.11.17
申请号 WO2016EP60653 申请日期 2016.05.12
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 TAUZIN, Aurélie;IMBERT, Bruno
分类号 H01L21/762 主分类号 H01L21/762
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