| 摘要 |
In a method of manufacturing a semiconductor device, at least a support body (1) and a monocrystalline semiconductor body (2) are provided with at least one flat optically smooth surface obtained by means of bulk-reducing polishing (mirror polishing), while at least the semiconductor body is provided at the optically smooth surface with an oxide layer (3). The two bodies (1 and 2) are brought into contact with each other in a dust-free atmosphere after their flat surfaces have been cleaned in order to obtain a mechanical connection. Before the bodies are brought into contact with each other, at least the oxide layer (3) on the semiconductor body (2) is subjected to a bonding-activating operation, while after a connection has been formed between the surfaces, radiation (5) of a laser is focused on the connection surface of the two bodies and material of at least the semiconductor body is molten locally near the connection surface by means of the laser radiation. After solidification, a locally fused connection has been established between the two bodies. The semiconductor body (2) is formed from a material admitting a sufficient oxygen diffusion.
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