发明名称 |
Wiring method of on-chip modification for an LSI |
摘要 |
A wiring method for on-chip modification of an LSI is provided to cut a portion of a wire inside of the LSI with an ion beam and connect the wire with a laser induced CVD process so that the logic is changed when developing the LSI. The method comprises the steps of cutting or connecting an LSI wire even if another wire is located above or adjacent to the LSI wire and repairing an excessively cut or connected portion. The method thus makes it possible to widen the range of a possible cutting or connection spot, thereby making any kind of repairs possible, some of which would have never been repaired by the conventional method.
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申请公布号 |
US5043297(A) |
申请公布日期 |
1991.08.27 |
申请号 |
US19900571179 |
申请日期 |
1990.08.22 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI, KATSUYOSHI;HAMAMOTO, MASATO;TAKAHASHI, TAKAHIKO |
分类号 |
H01L21/3205;H01L21/768;H01L21/82;H01L23/52;H01L23/525 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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