| 摘要 |
The invention provides, notably for optical addressability, a semiconductor deep cavity device comprising a relatively rigid optically transparent substrate bearing a semiconductor wafer, having interposed between the wafer and the substrate an apertured sheet of a glass, the aperture of which defines the device cavity. The invention also provides a method of making such a device, comprising placing the apertured sheet and the wafer in their relative positions and applying an electrostatic field between them sufficient to bond them, and (previously, simultaneously or subsequently) placing the substrate and the apertured sheet in their relative positions and applying an electrostatic field between them sufficient to bond them, the bonding being accomplished using field-assisted bonding at an elevated temperature. The wafer may be formed with an annular trench in its surface facing the substrate, with the boundary of the aperture of the interposed glass sheet substantially coinciding with that of the trench. |
